Rsuwei

RTD Wafer

RTD wafer inroduction

RTD Wafer, High Temperature Precision Testing System

  • Wafer size: 4″, 6″, 8″, 12″
  • Temperature precision: ±0.01℃
  • Temperature measure range: -40-250℃
  • Number of measurement point: 1~97

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RTD Wafer 

Product Introduction

RTD Wafer(Or called the Instrumented Wafer or Bonded Wafer) is a temperature sensor that uses a special processing technology to embed temperature sensors (resistance temperature detector) at specific locations on the wafer surface, thus realizing real-time temperature measurement of the wafer surface.

Through RTD Wafer, the real-time temperature measurement values of specific points on the wafer and the temperature distribution of the overall wafer can be obtained; it can also be used to continuously monitor the transient temperature changes of the wafer during the heat treatment process.

The instrumented wafers are being used in many industries including Rapid Thermal Processing (RTP), Rapid Thermal Annealing (RTA), coating /developing.

Specifications

Item No.ItemData
1Precision±0.05℃(-80-250℃,0-250℃)
±0.5℃(-80-350℃,0-350℃)
2Measurement range-80~250℃(±0.05℃)
-80-350℃(±0.5℃) 
3Temp resolution0.01℃
4TC typePT
5Number of measurement point1~81
6Wafer materialSilicon/sapphire, etc.
7Wafer size2”,4”,6”,8”,12”
8ConnectionWire/Wireless
9Thickness2~3.5mm
10ApplicationTrack、ALD、Prob station、High-precision hot plate

Software demostration Interface

Applications

Track
ALD
Prob station
High-precision hot plate

Customization

1. Determine the temperature accuracy requirements and dimensions.

2. Determine the vacuum requirements.

3. Determine the number and arrangement of points.

4.Determine the length of the lead wire.